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high voltage fast switching npn po wer transistor apt13003d data sheet 1 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited general description the apt13003d is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. the apt13003d is available in to-92 (bulk or ammo packing), to-126 and to-251 packages. features high switching speed high collector-emitt er voltage: 700v low cost high efficiency applications battery chargers for mobile phone of bcd solu- tion power supply for dvd/stb of bcd solution figure 1. package types of apt13003d to-126 to-251 to-92(bulk packing) to-92(ammo packing)
high voltage fast switching npn po wer transistor apt13003d data sheet 2 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited pin configuration u package (to-126) base emitter collector i package (to - 251) collector base emitter 3 2 1 figure 2. pin configuration of apt13003d (front view) 1 2 3 (front view) z package (to-92 (bulk packing)) (to-92 (ammo packing)) 1 2 3 1 2 3 collector collector base base emitter emitter (top view) (top view) internal structure figure 3. internal structure of apt13003d collector base emitter
3 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited high voltage fast switching npn po wer transistor apt13003d data sheet parameter symbol value unit collector-emitter voltage (v be =0) v ces 700 v collector-emitter voltage (i b =0) v ceo (sus) 450 v emitter-base br eakdown voltage (i c =0) v ebo 9v collector current i c 1.5 a collector peak current i cm 3.0 a base current i b 0.75 a base peak current i bm 1.5 a power dissipation (t a =25 o c) for to-92 p tot 1.1 w power dissipation (t c =25 o c) for to-251 24 for to-126 20 operating junction temperature t j 150 o c storage temperature range t stg -55 to 150 o c ordering information note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) circuit type apt13003d - bcd semiconductor's pb-free products, as de signated with "g1" suffix in the part number, are rohs compliant and green. blank: tube or bulk g1: green package part number marking id packing type to-126 apt13003du-g1 gu13003d bulk to-92 APT13003DZ-G1 13003dz-g1 bulk apt13003dztr-g1 13003dz-g1 ammo to-251 apt13003di-g1 apt13003di-g1 tube i: to-251 package u: to-126 z: to-92 tr: ammo
high voltage fast switching npn po wer transistor apt13003d data sheet 4 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited parameter symbol condition min typ max unit collector cut-off current (v be =-1.5v) i cev v ce =700v 10 a collector-emitter sustaining (i b =0) v ceo (sus) i c =100 a 450 v collector-emitter saturation voltage v ce (sat) i c = 0.5a, i b =0.1a 0.3 v i c =1.0a, i b =0.25a 0.4 base-emitter saturation voltage v be (sat) i c =0.5a, i b =0.1a 1.0 v i c =1.0a, i b =0.25a 1.2 dc current gain (note 2) h fe i c =0.5a, v ce =2.0v 16 30 i c =1.0a, v ce =2.0v 5.0 25 turn-on time with resistive load ton i c =1.0a, v cc =125v i b1 =0.2a, i b2 =-0.2a 0.7 s storage time with resistive load ts 3.0 s fall time with resistive load tf 0.35 s output capacitance c ob v cb =10v, f=0.1mhz 18 pf current gain bandwidth product f t v ce =10v, i c =0.1a 4 mh ( t c =25 o c, unless otherwise specified.) electrical characteristics note 2: pulse test for pulse width 300 s, duty cycle 2%. parameter symbol value unit maximum thermal resistance ? junction to case ? for to-126 jc 6.25 o c/w for to-251 5.0 for to-92 83.3 maximum thermal resistance ? junction to ambient ? for to-126 ja 96 o c/w for to-251 110 for to-92 113.6 thermal characteristics
5 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited high voltage fast switching npn po wer transistor apt13003d data sheet typical performance characteristics figure 4. safe operating areas figure 7. power derating curve (to-126 package) figure 5. safe operating areas (to-92 package) figure 6. safe operating areas (to-251 package) 1 10 100 1000 0.01 0.1 1 10 dc collector-emitter clamp voltage v ce (v) collector current i c (a) t c =25 o c 1 10 100 1000 1e-3 0.01 0.1 1 10 t c =25 o c collector-emitter clamp voltage v ce (v) collector current i c (a) dc 1 10 100 1000 0.01 0.1 1 10 dc collector-emitter clamp voltage v ce (v) collector current i c (a) t c =25 o c 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 case temperature ( o c) power derating factor (%)
high voltage fast switching npn po wer transistor apt13003d data sheet 6 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 10. collector-emitter saturation region figure 11. base-emitter saturation voltage figure 9. dc current gain figure 8. static characterstics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i b =200ma i b =180ma i b =160ma i b =140ma i b =120ma i b =100ma i b =80ma i b =60ma i b =40ma colltector current i c (a) collector-emitter voltage v ce (v) i b =20ma 0.01 0.1 1 10 0 5 10 15 20 25 30 35 t j =25 o c t j =125 o c dc current gain collector current i c (a) v ce =2v 0.1 1 10 0.60 0.75 0.90 1.05 1.20 t j =25 o c t j =125 o c base-emitter voltage v be (v) collector current i c (a) h fe =5 0.1 1 10 0.01 0.1 1 10 t j =25 o c t j =125 o c collector-emitter voltage v ce (v) collector current i c (a) h fe =5
7 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited high voltage fast switching npn po wer transistor apt13003d data sheet mechanical dimensions to-126 unit: mm(inch) 1.060(0.042) 1.500(0.059) 2.400(0.094) 2.900(0.114) 0.400(0.016) 0.600(0.024) 7.400(0.291) 8.200(0.323) 3. 600(0. 142) 10.600(0.417) 11.200(0.440) 0.660(0.026) 0.860(0.034) 14.500(0.570) 15.900(0.626) 1. 700(0. 067) 2. 100(0. 083) 1.170(0.046) 1.470(0.058) 2.280(0.090) typ 4.560(0.180) typ. 3.100(0.122) 3.550(0.140) 0. 300(0. 012) 0. 000(0. 000) 3.900(0.154)
high voltage fast switching npn po wer transistor apt13003d data sheet 8 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited mechanical dimensions (continued) to-92 (bulk packing) unit: mm(inch) 2.420(0. 095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1. 600(0. 063) max 12.500(0.492) 15.500(0.610) 1.270(0. 050) typ 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.000(0. 039) 1.400(0. 055) 4.400(0.173) 4.800(0.189) 3.430(0.135) min 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015)
9 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited high voltage fast switching npn po wer transistor apt13003d data sheet mechanical dimensions (continued) to-92 (ammo packing) unit: mm(inch) 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0.000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
high voltage fast switching npn po wer transistor apt13003d data sheet 10 jul. 2012 rev. 1. 2 bcd semiconductor manufacturing limited mechanical dimens ions (continued) to-251 unit: mm(inch) 0.950 ( 0.037 ) 1.250 ( 0.049 ) 5. 400 ( 0. 213 ) 5. 200 ( 0. 205 ) 0. 640 ( 0.025 ) 0. 740 ( 0.029 ) 2. 240 ( 0. 088 ) 4.430 ( 0. 174 ) 4.730 ( 0. 186 ) 0. 450 ( 0. 018 ) 0. 550 ( 0. 022 ) 2. 200 0. 087 2. 400 0. 094 0. 450 ( 0. 018 ) 0. 550 ( 0. 022 ) 5.950 (0.234) 6.250 (0.246) 9.000(0.354) 9.400(0.370) 6.450(0.254) 6.750(0.266) 2. 340 ( 0.092 ) 0.950(0.037) 1.150(0.045)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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